Effect of threading strain from the interface between P-GaN and an annealed ITO transparent conducting layer to InGaN/GaN multiple quantum wells

Amsterdam [u.a.] / Elsevier Science (2019, 2020) [Journal Article]

Vacuum : surface engineering, surface instrumentation & vacuum technology
Volume: 172
Page(s): 109035

Authors

Selected Authors

Lin, Yen-Sheng
Li, Ching Ning
Tseng, Chun-Lung
Shen, Ching-Hsing
Mayer, Joachim

Other Authors

Su, Shui-Hsiang

Identifier